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| MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4006 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. * * * Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : IC (DC) = 2 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Industrial Applications Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 80 80 8 2 3 0.5 2.0 PNP -80 -80 -8 -2 -3 -0.5 Unit V V V A A W JEDEC JEITA TOSHIBA 2-25A1B Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 -55 to 150 W C C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-10-27 MP4006 Array Configuration R1 R2 10 6 8 7 3 9 5 2 4 R1 R2 1 R1 4 k R2 800 Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Symbol Max Unit Rth (j-a) 31.3 C/W Electrical Characteristics (Ta = 25C) (NPN transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Saturation voltage Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton Input Switching time 20 s Storage time tstg IB1 IB2 Test Condition VCB = 80 V, IE = 0 A VCE = 80 V, IB = 0 A VEB = 8 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 30 Min 0.8 80 80 2000 Typ. 100 20 0.4 Max 10 10 4.0 1.5 2.0 Unit A A mA V V V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 4.0 s VCC = 30 V 0.6 Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% 2 2006-10-27 MP4006 Electrical Characteristics (Ta = 25C) (PNP transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Saturation voltage Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = -80 V, IE = 0 A VCE = -80 V, IB = 0 A VEB = -8 V, IC = 0 A IC = -1 mA, IE = 0 A IC = -10 mA, IB = 0 A VCE = -2 V, IC = -1 A IC = -1 A, IB = -1 mA IC = -1 A, IB = -1 mA VCE = -2 V, IC = -0.5 A VCB = -10 V, IE = 0 A, f = 1 MHz Min -0.8 -80 -80 2000 Typ. 50 30 Max -10 -10 -4.0 -1.5 -2.0 Unit A A mA V V V MHz pF Transition frequency Collector output capacitance IB2 Turn-on time Input 20 s IB2 IB1 Output 30 0.4 Switching time Storage time tstg 2.0 s VCC = -30 V Fall time tf -IB1 = IB2 = 1 mA, duty cycle 1% 0.4 Marking MP4006 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 3 2006-10-27 MP4006 (NPN transistor) IC - VCE 3.2 2 0.5 0.3 Common emitter Ta = 25C 3.2 Common emitter VCE = 2 V IC - VBE (A) (A) 0.21 0.2 2.4 0.23 2.4 Collector current IC Collector current IC 1.6 1.6 0.8 IB = 0.19 mA 0.8 Ta = 100C 25 -55 0 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 3.2 4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 10000 Common emitter 5000 VCE = 2 V 2.4 VCE - IB Common emitter 2.0 Ta = 25C DC current gain hFE 3000 Ta = 100C 1000 500 300 -55 VCE (V) 1.6 2.0 1.2 0.5 0.8 0.1 1.5 1 Collector-emitter voltage 25 2.5 IC = 3 A 0.4 ) 0 0.1 100 0.03 0.05 0.1 0.3 0.5 1 3 5 10 Collector current IC (A) 1 10 100 500 Base current IB (mA) VCE (sat) - IC 5 VBE (sat) - IC 5 Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) 3 Common emitter IC/IB = 500 3 Ta = -55C 25 1 100 1 Ta = -55C 25 0.5 100 0.5 0.3 0.3 0.5 1 3 0.3 0.1 Common emitter IC/IB = 500 0.3 0.5 1 3 Collector current IC (A) Collector current IC (A) 4 2006-10-27 MP4006 (PNP transistor) IC - VCE -3.2 -1 -0.4 Common emitter Ta = 25C -3.2 Common emitter VCE = -2 V IC - VBE (A) (A) Collector current IC -2.4 -0.3 -2.4 Collector current IC -0.25 -1.6 -0.2 -0.8 -1.6 IB = -0.17 mA -0.8 Ta = 100C 25 -55 0 0 0 -2 -4 -6 -8 -10 0 0 -0.8 -1.6 -2.4 -3.2 -4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 10000 -2.4 Common emitter 5000 V CE = -2 V VCE - IB Common emitter -2.0 Ta = 25C DC current gain hFE 3000 Ta = 100C 25 1000 -55 500 300 VCE (V) -1.6 Collector-emitter voltage -2.0 -2.5 IC = -3 A -1.5 -1.0 -1.2 -0.8 -0.1 -0.4 -0.5 ) 0 -0.1 100 -0.03 -0.1 -0.3 -0.5 -1 -3 -5 -10 Collector current IC (A) -1 -10 -100 -500 Base current IB (mA) VCE (sat) - IC -5 VBE (sat) - IC -5 Collector-emitter saturation voltage VCE (sat) (V) -3 Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 500 -3 Ta = -55C 25 -1 100 -1 Ta = -55C 25 -0.5 100 -0.5 -0.3 -0.1 -0.3 -0.5 -1 -3 -0.3 -0.1 Common emitter IC/IB = 500 -0.3 -0.5 -1 -3 Collector current IC (A) Collector current IC (A) 5 2006-10-27 MP4006 rth - tw Curves should be applied in thermal 100 (4) Transient thermal resistance rth (C/W) 30 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (1) (3) (2) 10 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation Circuit board (4) 4-device operation 0.01 0.1 1 10 100 1000 3 NPN PNP 1 0.5 0.001 Pulse width tw (s) Safe Operating Area (NPN Tr) 5 8 IC max (pulsed)* 10 ms* 1 0.5 0.3 100 s* PT - Ta (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-devics operation Attached on a circuit board Transient thermal resistance rth (C/W) 3 PT (W) Total power dissipation 6 1 ms* 4 (4) (3) (2) Circuit board 0.1 0.05 0.03 1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 3 5 10 30 50 2 (1) VCEO max 100 300 0 0 40 80 120 160 200 Collector-emitter voltage VCE (V) Ambient temperature Ta (C) Safe Operating Area (NPN Tr) -5 I max (pulsed)* -3 C 10 ms* -1 -0.5 -0.3 100 s* 160 Tj - PT Junction temperature increase Tj (C) Transient thermal resistance rth (C/W) (1) 120 (2) (3) (4) 1 ms* 80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-devices operation (3) 3-devices operation (4) 4-devices operation 1 2 3 4 5 -0.1 -0.05 -0.03 -1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. -3 -5 -10 -30 -50 VCEO max -100 -300 0 0 Collector-emitter voltage VCE (V) Total power dissipation PT (W) 6 2006-10-27 MP4006 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-10-27 |
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